SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To reduce the resistance of each member included in a transistor, to improve ON current of the transistor, and to improve performance of an integrated circuit.

SOLUTION: A semiconductor device includes an n-channel FET and a p-channel FET which are provided on a single crystal semiconductor substrate with an insulating layer provided therebetween and are isolated by an element isolation insulating layer. In the semiconductor device, each FET includes: a channel formation region including a semiconductor material; a conductive region which is in contact with the channel formation region and includes the semiconductor material; a metal region in contact with the conductive region; a gate insulating layer in contact with the channel formation region; a gate electrode in contact with the gate insulating layer; and a source or drain electrode partly including the metal region.

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