| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To promote low power consumption and high speed of a nonvolatile semiconductor memory device using a resistance change type element. <P>SOLUTION: The resistance change type element has a recording layer containing a metal oxide, and two electrodes, and the structure of the resistance change type element is made asymmetric to make a threshold current for higher resistance different by directions of a current flowing by application of a voltage to the resistance change type element. Rewriting of data is performed by making the current flow in a direction of a small threshold current for higher resistance, and reading of the data by resistance value determination is performed by making the current flow in a direction of a large threshold current for higher resistance. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
