发明名称 |
ALUMINUM NITRIDE SINGLE CRYSTAL, METHOD FOR PRODUCING THE SAME, AND APPARATUS FOR PRODUCING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing an aluminum nitride single crystal by which an aluminum nitride single crystal having good quality can be produced with good productivity while a crystal growth rate is stabilized for a long time. SOLUTION: The method for producing an aluminum nitride single crystal 24 by a gas phase method is carried out in an apparatus including a raw material gas generating vessel 11 connected to a growth vessel 2 and having a nitrogen gas inlet 17, a feeder 13 disposed on an upper face of the raw material gas generating vessel 11, and a raw material hopper 12 disposed on an upper face of the feeder 13 and continuously supplying the raw material 21. The method comprises: supplying a raw material 21 prepared by mixing aluminum oxide powders and carbon powders to the raw material gas generating vessel 11; heating the raw material gas generating vessel 11 to produce Al gas; transporting the Al gas and nitrogen supplied to the raw material gas generating vessel 11 from a nitrogen gas inlet 17, into the growth vessel 2; and continuously growing an aluminum nitride single crystal 24 in the growth section of the growth vessel 2. COPYRIGHT: (C)2011,JPO&INPIT
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申请公布号 |
JP2011026162(A) |
申请公布日期 |
2011.02.10 |
申请号 |
JP20090172340 |
申请日期 |
2009.07.23 |
申请人 |
FUJIKURA LTD;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE& TECHNOLOGY |
发明人 |
KAMATA HIROYUKI;KATO TOMOHISA;NAGAI ICHIRO;MIURA TOMONORI |
分类号 |
C30B29/38;C30B25/14 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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