In an aspect of the invention, a process to make a nanowire array is provided. In the process, silicon is deposited onto a conductive substrate comprising an organic material and optionally a conductive layer, thus forming a silicon-containing layer. Nanoparticles are deposited on top of the silicon-containing layer. Metal is deposited on top of the nanoparticles and silicon in such a way that the metal is present and touches silicon where etching is desired and is blocked from touching silicon or not present elsewhere. The metallized substrate is contacted with an etchant aqueous solution comprising about 2 to about 49 weight percent HF and an oxidizing agent.
申请公布号
WO2011017173(A2)
申请公布日期
2011.02.10
申请号
WO2010US43575
申请日期
2010.07.28
申请人
BANDGAP ENGINEERING INC.;BUCHINE, BRENT;MILLER, JEFF;BLACK, MARCIE;MODAWAR, FARIS
发明人
BUCHINE, BRENT;MILLER, JEFF;BLACK, MARCIE;MODAWAR, FARIS