| 摘要 |
PURPOSE: A solid image taking device, a method for manufacturing the same, and an image taking device including the same are provided to stabilize an electrical signal obtained from photoelectric transformation in the solid image taking device. CONSTITUTION: A photo-diode(41) implementing photoelectric transformation is formed on a silicon substrate(2). A first film(21) is formed on the semiconductor layer using either of an atomic layer deposition method and an organic metal chemical-vapor-deposition method. The first film includes a fixed negative electric charge. A second film(22) is formed on the first film using a physical vapor deposition method. A third film(23) is formed on the second film using either of the atomic layer deposition method or an organic metal chemical-vapor-deposition method. |
