发明名称 PLASMA PROCESSING DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR FILM
摘要 <P>PROBLEM TO BE SOLVED: To raise energy density by feeding powers of a plurality of high frequency power supplies for plasma, and to suppress a phenomenon in which treatment becomes uneven by high frequency powers simultaneously supplied. <P>SOLUTION: A plurality of the high frequency power supplies 118, 119 are connected to an electrode 120 to generate plasma in this plasma processing device. In this plasma processing device, a reset circuit 117 to make oscillators 112, 116 repeat stoppage of oscillation for a time duration of not more than 10% compared with the time during which oscillation continues and re-oscillation after the stoppage is connected to the oscillators to generate the high frequency signal of any one of the high frequency power supplies. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011029069(A) 申请公布日期 2011.02.10
申请号 JP20090175321 申请日期 2009.07.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKI MASAKAZU;TSUDA MUTSUMI;SHINTANI KENJI;IMAMURA KEN
分类号 H05H1/46;C23C16/505;H01L21/205;H01L21/3065;H01L31/04 主分类号 H05H1/46
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