METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which includes a new technique for forming a barrier between copper wiring and aluminum wiring. SOLUTION: The method of manufacturing the semiconductor device comprises the steps of: forming an insulating film on the copper wiring formed above a semiconductor substrate; forming a recessed part on the insulating film and exposing the copper wiring at a bottom of the recessed part; selectively forming a tungsten film by a CVD method on the copper wiring exposed at the bottom of the recessed part by alternately repeating a supply period and a supply stop period of tungsten fluoride at a film forming temperature in a range of 250 to 350°C; and forming the aluminum wiring above the tungsten film. COPYRIGHT: (C)2011,JPO&INPIT