发明名称 LIGHT EMITTING DIODE HAVING WAVELENGTH CONVERSION PILES AND METHOD FOR FABRICATING THE SAME
摘要 <p>PURPOSE: A light emitting diode including wavelength conversion posts and a manufacturing method thereof are provided to reduce manufacturing time of the light emitting diode through wavelength conversion materials by forming the wavelength conversion materials on the upper, lower and lateral sides of a light emitting structure in a fab process. CONSTITUTION: A light emitting structure(S) is arranged on the upper side of a first semiconductor layer(12) of a substrate(10). The light emitting structure includes a second semiconductor layer(16) which exposes the part of the upper side of the first semiconductor layer. A first electrode(22) and a second electrode(24) are arranged on the upper side of the first and second semiconductor layers. A light transmitting protection layer(26) is arranged on the substrate except the first and second electrodes. A wavelength conversion post(32) is arranged on the light transmitting protection layer and a plurality of penetration holes which pass through the edges of the substrate.</p>
申请公布号 KR20110013636(A) 申请公布日期 2011.02.10
申请号 KR20090071181 申请日期 2009.08.03
申请人 KOREA PHOTONICS TECHNOLOGY INSTITUTE 发明人 LEE, KWANG CHEOL;KIM, JAE PIL;SONG, SANG BIN;KIM, YOUNG WOO;KIM, SANG MOOK
分类号 H01L33/50 主分类号 H01L33/50
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