发明名称 PHOTOELECTRIC CONVERSION DEVICE, AND METHOD OF MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a new photoelectric conversion device having an effect of reducing loss of light absorption in a window layer, and a method of manufacturing the same. <P>SOLUTION: In a laminated body formed by sequentially laminating, on an insulation material, a first electrode, a first impurity semiconductor layer having one conductivity type, an intrinsic semiconductor layer, a second impurity semiconductor layer having a conductivity type opposite to the one conductivity type, and a translucent second electrode, the translucent second electrode and the second impurity semiconductor layer have each one or more openings. The shortest distance between one portion of an interface between the second impurity semiconductor layer and the intrinsic semiconductor layer on the wall surface of the opening, and the interface between the second impurity semiconductor layer and the intrinsic semiconductor layer facing the one portion on the wall surface of the same opening, is made smaller than the diffusion length of holes in the intrinsic semiconductor layer, whereby recombination is suppressed, so that further more photocarriers generated in the openings are extracted as current, and conversion efficiency is improved. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011029625(A) 申请公布日期 2011.02.10
申请号 JP20100145961 申请日期 2010.06.28
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 NISHI KAZUO;KUSUMOTO NAOTO
分类号 H01L31/04;H01L31/042 主分类号 H01L31/04
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