| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a group III nitride crystal, in which a highly crystalline group III nitride crystal provided with principal surfaces that have an orientation other than ä0001} is grown at a high crystal growth rate. SOLUTION: The method for producing a group III nitride crystal includes: a process for cutting out a plurality of group III nitride crystal substrates (10p, 10q) provided with principal surfaces (10pm, 10qm) that have an orientation with an off-angle of≤5°in relation to a crystal geometric equivalent orientation selected from a group comprising ä20-21}, ä20-2-1}, ä22-41}, and ä22-4-1}, from a group III nitride bulk crystal (1); a process for adjoining together and disposing the substrates (10p, 10q) in a transverse direction in a manner such that the principal surfaces (10pm, 10qm) of the substrates (10p, 10q) are mutually parallel, and such that the [0001] directions of the substrates (10p, 10q) are identical; and a process for growing the group III nitride crystal (20) upon the principal surfaces (10pm, 10qm) of the substrates (10p, 10q). COPYRIGHT: (C)2011,JPO&INPIT |
