| 摘要 |
PROBLEM TO BE SOLVED: To equalize stress received by a channel forming region from an element isolating region in a channel width direction. SOLUTION: The semiconductor device includes the element isolating region 2 and the element forming region 3 surrounded by the element isolating region 2. The circumferential shape of the element forming region 3 has a first side extending along a first direction. The element forming region 3 has a first transistor region 6-1, a second transistor region 6-2 arranged at a position between the first side and the first transistor region 6-1 in their two directions, and a dummy region 7 arranged at the side of the second transistor region 6-2 in the first direction. The first transistor region 6-1 has a first channel forming region 4-1. The second transistor region 6-2 has a second channel forming region 4-2. The first channel forming region 4-1 has a non-facing region 14 that does not face the second forming region 4-2. The dummy region 7 faces the non-facing region 14 in the second direction. COPYRIGHT: (C)2011,JPO&INPIT |
