发明名称 |
N-CHANNEL SONOS NON-VOLATILE MEMORY FOR EMBEDDED IN LOGIC |
摘要 |
A system and method of an electrically programmable and erasable non-volatile memory cell fabricated using a single-poly, logic process with the addition of ONO deposition and etching is disclosed. In one embodiment, a non-volatile memory system includes at least one non-volatile memory cell consists of a SONOS transistor fabricated on a P substrate, with a deep N-well located in the P substrate, with a P-well located in the deep N-well. The memory cell further includes an access NMOS transistor, coupled to the SONOS transistor and located in the same P-well that includes an oxide only gate-dielectric. The cell can be fabricated in a modified logic process with other transistors and with their physical characteristics preserved.
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申请公布号 |
US2011032766(A1) |
申请公布日期 |
2011.02.10 |
申请号 |
US20100906153 |
申请日期 |
2010.10.18 |
申请人 |
CHIP MEMORY TECHNOLOGY, INC. |
发明人 |
FANG GANG-FENG;LEUNG WINGYU |
分类号 |
G11C16/04;H01L21/336;H01L29/792 |
主分类号 |
G11C16/04 |
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