发明名称 LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
摘要 A light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors in accordance with characteristics of the plural kinds of circuits are included. An inverted-coplanar thin film transistor including an oxide semiconductor layer which overlaps a source and drain electrode layers is used as a thin film transistor for a pixel, a channel-stop thin film transistor is used as a thin film transistor for a driver circuit, and a color filter layer is provided between the thin film transistor for a pixel and a light-emitting element so as to overlap the light-emitting element which is electrically connected to the thin film transistor for a pixel.
申请公布号 US2011031496(A1) 申请公布日期 2011.02.10
申请号 US20100848375 申请日期 2010.08.02
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;SAKAKURA MASAYUKI;SAKATA JUNICHIRO;TSUBUKU MASASHI;AKIMOTO KENGO;HOSOBA MIYUKI;OIKAWA YOSHIAKI
分类号 H01L33/02;H01L33/00;H01L33/44 主分类号 H01L33/02
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