发明名称 |
CMOS STRUCTURE WITH MULTIPLE SPACERS |
摘要 |
A semiconductor device includes a substrate having shallow trench isolation and source/drain regions located therein, a gate stack located on the substrate between the source/drain regions, a first gate spacer on the sidewall of the gate stack, and a second gate spacer on the sidewall of the first gate spacer.
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申请公布号 |
US2011031538(A1) |
申请公布日期 |
2011.02.10 |
申请号 |
US20100757517 |
申请日期 |
2010.04.09 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HSIEH BOR CHIUAN;CHUNG HAN-PING;KO CHIH-HSIN;CHAN BOR-WEN;TAO HUN-JAN |
分类号 |
H01L29/78;H01L29/49 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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