| 摘要 |
The present invention relates to photodetectors with high efficiency of light detection, and can be used in a wide field of applications, which employ the detection of very weak and fast optical signals, namely industrial and medical tomography, life science, nuclear, particle and astroparticle physics etc. A highly efficient CMOS-technology compatible Silicon Photoelectric Multiplier (10; 20) comprises a substrate (21), a buried layer (22) applied within said substrate (21), said multiplier (10; 20) consists of cells (1) with a silicon strip-like quenching resistors (5) made by CMOS-technology, located for each cell (1) on top of the substrate (21) under an insulating layer (7), and separating elements (4) are disposed between the cells (1).
|
