| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor device where a plurality of metal films composed of a laminated structure are formed on a semiconductor substrate by an electroless plating process, in which the number of plating tanks located under a light shielding environment can be reduced. <P>SOLUTION: The process for forming metal films comprises: an electroless plating step (step S52) including reduction reaction using a first plating tank; an electroless plating step (step S54) only by substitution reaction using a second plating tank; and an electroless plating step (step S56) only by substitution reaction using a third plating tank. The electroless plating step including reduction reaction using the first plating tank is performed in a light shielding environment, and the electroless plating steps only by substitution reaction using the second plating tank and the third plating tank are performed in a non-light shielding environment. <P>COPYRIGHT: (C)2011,JPO&INPIT |
