| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a piezoelectric thin film element and manufacturing method thereof, for achieving an improvement in piezoelectric characteristics. <P>SOLUTION: This invention relates to a piezoelectric thin film element having at least a lower electrode, a piezoelectric thin film represented by general formula (Na<SB>x</SB>K<SB>y</SB>Li<SB>z</SB>)NbO<SB>3</SB>(0≤x≤1, 0≤y≤1, 0≤z≤0.2, x+y+z=1), and an upper electrode, arranged on a substrate, wherein the piezoelectric thin film has a crystal structure of a pseudo-cubic crystal or a tetragonal crystal or an orthorhombic crystal, or has a composition in which at least one of these crystals coexists, and is preferentially oriented to two or less specific axes out of crystal axes of these crystals. As a component of the oriented crystal axis, in the ratio of component (001) to component (111), volume fraction of the component (001) falls within a range of 60% or more and 100% or less, and the volume fraction of the component (111) falls within a range of 0% or more and 40% or less, in a case that the total of the component (001) and the component (111) is set to be 100%. <P>COPYRIGHT: (C)2011,JPO&INPIT |
