| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a laminate comprising a crystalline homologous compound layer having target resistivity. <P>SOLUTION: The method of manufacturing the laminate comprising the crystalline homologous compound layer has a step of forming the crystalline homologous compound layer represented by M<SP>1</SP>M<SP>2</SP>O<SB>3</SB>(M<SP>3</SP>O)<SB>m</SB>(M<SP>1</SP>is at least one type of an element selected from a group formed of Sc, In, Lu, Yb, Tm, Er, Ho and Y, M<SP>2</SP>is at least one type of element selected from a group formed of Fe, Ga, In and Al, M<SP>3</SP>is at least one type of element selected from a group formed of Cd, Mg, Mn, Co, Cu and Zn and m is a natural number of 1 or above) and a step of controlling resistivity of the crystalline homologous compound layer by forming a protection layer covering the crystalline homologous compound layer under an atmosphere where a condition that oxygen partial pressure is≤2×10<SP>-2</SP>Pa or a temperature is≥150°C is satisfied. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
