| 摘要 |
PURPOSE:To enhance reaction efficiency, by successively laminating membrane like semiconductors from an incident light side in order larger in band gap energy and joining P-type and N-type membrane like semiconductors to tunnel through a high dope layer. CONSTITUTION:A P-type membrane like semiconductor 11 has band gap energy of Eg1 and a N-type membrane like semiconductor 12 has band gap energy of Eg2. The P-type membrane like semiconductor 11 and the N-type membrane like semiconductor 12 are jointed through a high-doped layer consisting of a high dope P-type region 13 and a high-doped N-type region 14. By this method, the P-type membrane like semiconductor 11 and the N-type membrane like semiconductor 12 form tunnel junction and, by this junction, mutual carrier injection functions in the same way as ohmic contact. The obtained semiconductive photocatalyst is increased in light absorbing efficiency and enhanced in reaction efficiency. |
