| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, by which the semiconductor device can be efficiently manufactured by simplifying a manufacturing process. <P>SOLUTION: The method of manufacturing the semiconductor device comprises the steps of: forming a p-type impurity diffusion region in a silicon substrate by diffusing boron in the silicon substrate; installing a diffusion control mask including at least one of silicon oxide and silicon oxide precursor on a boron silicide layer on the p-type impurity diffusion region produced at the time of forming the p-type impurity diffusion region; forming an n-type impurity diffusion region in the silicon substrate by diffusing an n-type impurity in the silicon substrate in which the diffusion control mask is installed; and removing a boron silicate glass layer produced at the time of forming an n-type impurity diffusion region. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
