发明名称 CHARGED PARTICLE BEAM EXPOSURE METHOD AND DEVICE, CHARGED PARTICLE BEAM EXPOSURE DATA GENERATING METHOD AND PROGRAM, AND BLOCK MASK
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a charged particle beam exposure method that improves the throughput. <P>SOLUTION: A charged particle beam exposure device includes a first aperture 65 which forms an electron beam emitted from an electron gun 64 into a rectangular having a predetermined size, a second aperture 66 which shapes the electron beam which is shaped into a rectangular having a predetermined size with the first aperture 65 into a rectangular having an arbitrary size, and a block mask 67 which shapes the electron beam which is shaped into the rectangular having an arbitrary size with the second aperture 66 into a pattern form for one-shot exposure. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011029676(A) 申请公布日期 2011.02.10
申请号 JP20100253340 申请日期 2010.11.12
申请人 FUJITSU SEMICONDUCTOR LTD 发明人 TAKITA HIROSHI
分类号 H01L21/027;G03F1/20;G03F1/68;G03F1/70 主分类号 H01L21/027
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