SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a new strain technology capable of effectively applying a compressive stress to a channel region of a p-channel transistor and a tensile stress to the channel region of n-channel transistor, even with a miniaturized transistor. SOLUTION: A gate electrode of the p-channel transistor 105 has a p-channel metal electrode 110 having an internal tensile stress. The gate electrode of the n-channel transistor 106 has an n-channel metal electrode 116 having an internal compressive stress. COPYRIGHT: (C)2011,JPO&INPIT