| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique capable of improving reliability of electric characteristics of a semiconductor device by properly designing a shape of an upper surface of a plug. SOLUTION: A plug PLG has an upper surface in a convex domed shape projected from the surface (upper surface) of a contact interlayer dielectric CIL. More specifically, the plug PLG has the upper surface presenting an upward convex domed shape, an upper end of a barrier conductor film BF1 is higher than the upper surface of the contact interlayer dielectric CIL, and an upper end of a tungsten film WF is further higher than the upper end of the barrier conductor film BF1. COPYRIGHT: (C)2011,JPO&INPIT |
