| 发明名称 |
SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To make adhesion of a buried semiconductor structure and Cu diffusion preventing capability be compatible with respect to a semiconductor device, and to provide a method of manufacturing the same. <P>SOLUTION: A CoMn-based alloy layer composed of Co as a maximum component and containing at least Mn, O and C is provided between: a Cu-based buried conductor layer buried in a recessed part for a buried conductor provided to an insulating film provided on a semiconductor substrate and made of Cu or an alloy composed of Cu as a maximum component; and the insulating film exposed from the recessed part. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
| 申请公布号 |
JP2011029255(A) |
申请公布日期 |
2011.02.10 |
| 申请号 |
JP20090170982 |
申请日期 |
2009.07.22 |
| 申请人 |
FUJITSU SEMICONDUCTOR LTD |
发明人 |
OTSUKA NOBUYUKI;HANEDA MASAKI |
| 分类号 |
H01L21/3205;H01L21/768;H01L23/52 |
主分类号 |
H01L21/3205 |
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