| 摘要 |
An electrostatic discharge protection structure (200) for an integrated circuit, the electrostatic discharge protection structure (200) comprising: a first silicon controlled rectifier structure (211) having a first triggering voltage, the first rectifier structure (211) being directly connected to an input (250) of the electrostatic discharge protection structure (200); a second silicon controlled rectifier structure (222) having a second triggering voltage lower than the first triggering voltage, the second rectifier structure (222) being connected to the input (250) via a resistor (221); and a secondary over-voltage protection unit (231) connected to the input (250) via the resistor (221).
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