| 摘要 |
According to one embodiment, a semiconductor apparatus includes a substrate, a semiconductor layer of a first conductivity type, a first semiconductor region of a second conductivity type, a first main electrode, a second semiconductor layer of the second conductivity type, a third semiconductor layer of the first conductivity type, a second main electrode, a gate insulating film, and a gate electrode. An electron injected from the first semiconductor region into the semiconductor layer is recombined with an electron hole injected from the third semiconductor region into the semiconductor layer in a state of a body diode is biased in a forward direction. The body diode includes the semiconductor layer, the first semiconductor region, and the third semiconductor region.
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