SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a method for manufacturing a semiconductor device, wherein damages and defects are prevented from being generated or significantly reduced at the periphery of a through via hole on the rear side of a semiconductor substrate. In a via-last method, a hole (16) is formed in the front surface of the silicon substrate (10), to which steps up to a BEOL step have been performed, an insulating film (18) is formed on the inner wall of the hole (16), and Cu is embedded in the hole (16) as a via conductor (24) by means of electrolytic plating. Then, the rear surface of the silicon substrate (10) is ground by means of wet etching until the bottom portion of the hole (16), i.e., the bottom portion of the Cu via conductor (24), is exposed.