发明名称 |
METHOD OF FORMING CONTACT DRAWING FROM NICKEL ON SILICON WAFERS |
摘要 |
FIELD: physics. ^ SUBSTANCE: method of forming contact drawing from nickel on silicon wafers involves formation of a dielectric film with windows, chemical deposition of nickel in said windows and formation of a nickel silicide interlayer from the gas phase during thermal decomposition of nickel tetracarbonyl vapour at temperature 200-300C, pressure in the system of (1-10)-10-1 mm Hg and rate of supplying nickel tetracarbonyl vapour equal to 0.5-2 ml/min per dm2 of the covering surface. The nickel layer is then removed up to the nickel silicide layer through chemical etching and nickel is deposited via chemical deposition onto the nickel silicide interlayer in the window of the dielectric film. ^ EFFECT: invention enables formation of a transparent contact for an electroconductive layer based on nickel with low ohmic resistance, independent of the type of conductivity and degree of doping of the silicon surface. ^ 1 ex, 1 tbl |
申请公布号 |
RU2411612(C1) |
申请公布日期 |
2011.02.10 |
申请号 |
RU20100104638 |
申请日期 |
2010.02.11 |
申请人 |
FEDERAL'NOE GOSUDARSTVENNOE UNITARNOE PREDPRIJATIE "GOSUDARSTVENNYJ ORDENA TRUDOVOGO KRASNOGO ZNAMENI NAUCHNO-ISSLEDOVATEL'SKIJ INSTITUT KHIMII I TEKHNOLOGII EHLEMENTOORGANICHESKIKH SOEDINENIJ" (FGUPGNIIKHTEHOS) |
发明人 |
UEHL'SKIJ ANATOLIJ ADAMOVICH;ZADDEH VITALIJ VIKTOROVICH;GREBENNIKOV ALEKSANDR VASIL'EVICH;STOROZHENKO PAVEL ARKAD'EVICH |
分类号 |
H01L21/285;H01L31/18 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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