| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for evaluating a semiconductor integrated circuit, capable of performing at high speed both detection of a defective transistor in a large scale semiconductor integrated circuit and measurement of characteristics of the defective transistor. <P>SOLUTION: A determination (threshold Vth determination) whether a threshold Vth of each transistor Tr in cell arrays 11 and 12 to be evaluated deviates from a distribution within 5σ relative to a normal distribution curve of the threshold Vth is made, by using a plurality of sense amplifiers SA_A and SA_B. Measurement of transistor characteristics is performed to each transistor Tr, having a threshold Vth deviated from the distribution within 5σ. When determination of the threshold Vth is made, in order to avoid the occurrence of dispersion in determination results of the threshold Vth due to an offset difference between the plurality of sense amplifiers SA_A and SA_B, a reference current REF is set, according to the offset difference between the plurality of sense amplifiers SA_A and SA_B so that determination results of the plurality of sense amplifiers to the same input are matched. <P>COPYRIGHT: (C)2011,JPO&INPIT |
