发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SAME |
摘要 |
A method for manufacturing a semiconductor device includes: forming a first layer on a substrate; forming a first contact hole in the first layer; burying a sacrificial film in the first contact hole; forming a second layer on the first layer and the first contact hole after burying; forming a second contact hole reaching the sacrificial film in the second layer; removing the sacrificial film from the first contact hole via the second contact hole; and providing a contact electrode in the first contact hole and the second contact hole.
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申请公布号 |
US2011031546(A1) |
申请公布日期 |
2011.02.10 |
申请号 |
US20100725662 |
申请日期 |
2010.03.17 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
UENAKA TSUNEO;HIGASHI KAZUYUKI |
分类号 |
H01L29/788;H01L21/20 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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