发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SAME
摘要 A method for manufacturing a semiconductor device includes: forming a first layer on a substrate; forming a first contact hole in the first layer; burying a sacrificial film in the first contact hole; forming a second layer on the first layer and the first contact hole after burying; forming a second contact hole reaching the sacrificial film in the second layer; removing the sacrificial film from the first contact hole via the second contact hole; and providing a contact electrode in the first contact hole and the second contact hole.
申请公布号 US2011031546(A1) 申请公布日期 2011.02.10
申请号 US20100725662 申请日期 2010.03.17
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 UENAKA TSUNEO;HIGASHI KAZUYUKI
分类号 H01L29/788;H01L21/20 主分类号 H01L29/788
代理机构 代理人
主权项
地址