发明名称 PATTERNING PROCESS AND RESIST COMPOSITION
摘要 A pattern is formed by coating a first positive resist composition comprising a copolymer comprising lactone-containing recurring units, acid labile group-containing recurring units and carbamate-containing recurring units, and a photoacid generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for inactivation to acid, coating a second positive resist composition comprising a C3-C8 alcohol and an optional C6-C12 ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.
申请公布号 US2011033803(A1) 申请公布日期 2011.02.10
申请号 US20100849344 申请日期 2010.08.03
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 HATAKEYAMA JUN;KATAYAMA KAZUHIRO;OHSAWA YOUICHI;OHASHI MASAKI
分类号 G03F7/004;G03F7/20 主分类号 G03F7/004
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