发明名称 AIR CHANNEL INTERCONNECTS FOR 3-D INTEGRATION
摘要 A three-dimensional (3D) chip stack structure and method of fabricating the structure thereof are provided. The 3D chip stack structure includes a plurality of vertically stacked chips which are interconnected and bonded together, wherein each of the vertically stacked chips include one or more IC device strata. The 3D chip stack structure further includes an air channel interconnect network embedded within the chip stack structure, and wherein the air channel interconnect network is formed in between at least two wafers bonded to each other of the vertically stacked wafers and in between at least two bonded wafers of the vertically stacked wafers at a bonding interface thereof. In addition, the 3D chip stack structure further includes one or more openings in a peripheral region of the chip stack structure that lead into and out of the air channel interconnect network, so that air can flow into and out of the air channel interconnect network through the one or more openings to remove heat from the chip stack structure.
申请公布号 US2011031633(A1) 申请公布日期 2011.02.10
申请号 US20090536176 申请日期 2009.08.05
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 HSU LOUIS L.;JI BRAIN L.;LIU FEI;MURRAY CONAL E.
分类号 H01L23/532;H01L21/50;H01L21/768 主分类号 H01L23/532
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