发明名称 |
LOW TEMPERATURE ION IMPLANTATION |
摘要 |
<p>A method of processing to a substrate while minimizing cost and manufacturing time is disclosed. The implantation of the source and drain regions of a semiconductor device are performed at low temperatures, such as below 273° K. This low temperature implant reduces the structural damage caused by the impacting ions. Subsequently, the implanted substrate is activated using faster forms of annealing. By performing the implant at low temperatures, the damage to the substrate is reduced, thereby allowing a fast anneal to be used to activate the dopants, while eliminating the majority of the defects and damage. Fast annealing is less expensive than conventional furnace annealing, and can achieve higher throughput at lower costs.</p> |
申请公布号 |
WO2011017622(A1) |
申请公布日期 |
2011.02.10 |
申请号 |
WO2010US44723 |
申请日期 |
2010.08.06 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;HATEM, CHRISTOPHER, R.;COLOMBEAU, BENJAMIN |
发明人 |
HATEM, CHRISTOPHER, R.;COLOMBEAU, BENJAMIN |
分类号 |
H01L21/265;H01L21/223;H01L21/268 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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