发明名称 METHOD FOR PRODUCING BARRIER FILM, BARRIER FILM AND METHOD FOR MANUFACTURING ORGANIC PHOTOELECTRIC CONVERSION ELEMENT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a barrier film having extremely high barrier performance, to use the film as a resin base material for an organic photoelectric conversion element, and to obtain a device such as an organic photoelectric conversion element having high durability by using the resin base material for an organic photoelectric conversion element. <P>SOLUTION: A method for producing the barrier film is characterized by applying a liquid containing at least one kind of silicon compound onto at least one surface of a base material, then drying the applied liquid at 20-120°C to form a thin film, and without performing a heating treatment at a temperature of≥140°C on the thin film, laminating a thin film of at least one kind of silicon compound on the base material, on which the thin film has been applied and formed, by a plasma CVD process using a reactive gas containing the silicon compound and oxygen. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011026645(A) 申请公布日期 2011.02.10
申请号 JP20090172036 申请日期 2009.07.23
申请人 KONICA MINOLTA HOLDINGS INC 发明人 SAITO YOICHI
分类号 C23C16/42;B32B9/00;B32B27/00;C23C16/50 主分类号 C23C16/42
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