| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of measuring a pattern shape precisely measuring the shape of a semiconductor pattern even if a process margin is narrower for miniaturization of a semiconductor device. <P>SOLUTION: The method of measuring a pattern shape includes: a step of setting at least one parameter to be a fixed value based on information obtained by another measuring device that uses a measurement method that does not depend on pattern shape measurement among shape parameters, for matching libraries to detection waveforms again, and selecting a calculation waveform that matches best when it is impossible to select a calculation waveform that matches best; and a step of obtaining shape information of a target pattern from the calculation waveform that has matched best. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
