| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon single crystal pulling device that suppresses condensation of SiO gas on a necessary part in the pulling device without complicating the device, prevents generation of dislocations in a silicon single crystal and suppresses reduction in a life of a carbon heater or a carbon crucible used upon pulling a silicon single crystal. SOLUTION: The silicon single crystal pulling device 100 includes: a first heater 5, which is disposed in the outer circumference of a crucible 3 and heats the crucible 3; a radiation shield 7, which is disposed above the crucible 3 and shields the silicon single crystal Ig against radiant heat; and a second heater 10, which is disposed above the first heater 5 and in the outer circumference of the radiation shield 7, and heats an upper part 3a1 of the crucible 3 and the outer circumference 7a of the radiation shield 7. COPYRIGHT: (C)2011,JPO&INPIT
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