| 摘要 |
A metal oxide semiconductor transistor includes a substrate including a first well, a second well, and an insulation between the first well and the second well, a first gate structure disposed on the first well, a second gate structure disposed on the second well, four first dopant regions disposed in the substrate at two sides of the first gate structure, and in the substrate at two sides of the second gate structure respectively, two second dopant regions disposed in the substrate at two sides of the first gate structure respectively, two first epitaxial layers disposed in the substrate at two sides of the first gate structure respectively and two first source/drain regions disposed in the substrate at two sides of the first gate structure respectively, wherein each of the first source/drain regions overlaps with one of the first epitaxial layers and one of the second dopant regions simultaneously.
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