| 发明名称 |
NONVOLATILE MEMORY SYSTEM USING DATA INTERLEAVING SCHEME |
| 摘要 |
A memory system comprises a plurality of nonvolatile memory devices configured for interleaved access. Programming times are measured and recorded for various memory cell regions of the nonvolatile memory devices, and interleaving units are formed by memory cell regions having different programming times.
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| 申请公布号 |
US2011035538(A1) |
申请公布日期 |
2011.02.10 |
| 申请号 |
US20100820445 |
申请日期 |
2010.06.22 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM HYUN-JU;CHOI CHANG-EUN;JEON TAEKEUN;BAE KYOUNG RYUN |
| 分类号 |
G06F12/00;G06F12/02;G11C16/04 |
主分类号 |
G06F12/00 |
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