发明名称 SINGLE LONGITUDINAL MODE LASER DIODE
摘要 A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.
申请公布号 US2011032967(A1) 申请公布日期 2011.02.10
申请号 US20100908592 申请日期 2010.10.20
申请人 BEHFAR ALEX A;MURO KIYOFUMI;STAGARESCU CHRISTIAN B;SCHREMER ALFRED T 发明人 BEHFAR ALEX A.;MURO KIYOFUMI;STAGARESCU CHRISTIAN B.;SCHREMER ALFRED T.
分类号 H01S5/30;G02B5/28;G02B6/26;H01S;H01S3/03;H01S3/08;H01S5/00;H01S5/026;H01S5/0625;H01S5/10;H01S5/125;H01S5/14;H01S5/22;H01S5/343 主分类号 H01S5/30
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