| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To make influence given to an area of a semiconductor memory device due to installation of a redundant memory cell array and a high-sensitive redundant sense amplifier, which have large areas, in the semiconductor storage device comparatively small. <P>SOLUTION: The memory cell array has a plurality of memory cells which are two-dimensionally arranged along a row direction and a column direction. At least a plurality of the memory cells in one column in a plurality of the memory cells are allocated as redundant memory cells with the large area. At least one sense amplifier installed on the column direction of a plurality of the memory cells in at least one column, which are allocated as the redundant memory cells, is allocated as the high-sensitive redundant sense amplifier in a plurality of the sense amplifiers disposed along the row direction and on the column direction in the respective columns of the memory cell array. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
