| 摘要 |
PROBLEM TO BE SOLVED: To provide such a technique that measures the distribution of semiconductor mobility in a field effect transistor in spatial resolution of nano meter level. SOLUTION: While the surface of channels of a field effect transistor is being scanned by a probe, the surface potential of the channels and potentials by trap charge just beneath the probe at each point are measured through potential measurement using an atomic force microscope, and the local mobility is calculated from the measured potentials, and further the distribution of mobility is obtained based on the mobilities calculated at each point. COPYRIGHT: (C)2011,JPO&INPIT
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