| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an SOI wafer which has a thick silicon oxide film of, for example, ≥1 μm adaptive to high-voltage use, and to provide the SOI wafer. SOLUTION: The method of manufacturing the SOI wafer includes at least a step of forming a CVD oxide film of ≥1 μm in thickness on a first silicon substrate and a step of sticking the first silicon substrate and the second silicon substrate on each other with the CVD oxide film interposed, and includes an annealing step of carrying out annealing at 1,100 to 1,300°C being included at least after the step of forming the CVD oxide film, or either before or after the step of sticking the silicon substrates. COPYRIGHT: (C)2011,JPO&INPIT
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