EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR ELEMENT

摘要

Disclosed is a nitride epitaxial substrate using single-crystal silicon as a base substrate and having excellent quality and characteristics. Specifically disclosed is an epitaxial substrate configured by forming a group-III nitride layer group on a (111) single-crystal silicon substrate such that the (0001) crystal plane is approximately parallel to the substrate surface, the epitaxial substrate being provided with a first group-III nitride layer produced from AlN and formed on the base substrate, a second group-III nitride layer produced from InxxAlyyGazzN (xx+yy+zz=1, 0=xx=1, 0