发明名称 Secondary sided driver circuit for controlling e.g. MOSFET utilized as TOP switch of half bridge circuit, has comparison element whose measuring input potential is approximately constant at different temperatures
摘要 <p>The circuit has a comparison element (30) i.e. shunt regulator, whose measuring input (302) is connected with an anode of a diode (42). A cathode of the diode is connected with a load contact unit (402) of a power semiconductor component i.e. power transistor (40). The comparison element exhibits temperature coefficients that are approximately same to that of the power semiconductor component, where potential of the measuring input of the comparison element is approximately constant at different temperatures. A zener diode (22) exhibits same temperature co-efficient as that of the diode.</p>
申请公布号 DE102009051735(B3) 申请公布日期 2011.02.10
申请号 DE20091051735 申请日期 2009.11.03
申请人 SEMIKRON ELEKTRONIK GMBH & CO. KG 发明人 HOPPERDIETHEL, RENE
分类号 H03K17/08;H02H3/20;H03K17/14 主分类号 H03K17/08
代理机构 代理人
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