| 摘要 |
PROBLEM TO BE SOLVED: To remove a hump formed by rinsing treatment of an antireflection film at a wafer end face, or an etching step and a residual film caused by the hump, and to prevent minute foreign materials from scattering from the wafer end face. SOLUTION: The outer peripheries of the antireflection films 121, 141 formed on a semiconductor wafer 111 are removed by rinsing treatment at the end face of the semiconductor wafer 111. Thereafter, the antireflection films 121, 141 and their underlayer structures are etched by using resist patterns 123, 143 formed on the antireflection films 121, 141. The rinsing treatment may produce the humps 122, 142 at the outermost peripheries of the antireflection films 121, 141. Before or after the etching, positions where the humps 122, 142 are formed are etched, at the wafer end face without providing masks to regions except the wafer end face. COPYRIGHT: (C)2011,JPO&INPIT |
