发明名称 METHOD FOR PRODUCTION OF GROUPS III-V COMPOUND CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method for producing a groups III-V compound crystal while suppressing polycrystallization. SOLUTION: The method for producing the groups III-V compound crystal includes arranging the raw materials 9 and 10, a sealant 12 and a dopant 11 in a crucible 6, and growing the groups III-V compound crystal by solidifying a melt generated by melting the raw materials 9 and 10. In the arranging process, a compound which includes the elements having a melting point lower than the softening point of the sealant 12 and has a melting point higher than the softening point of the sealant 12 is arranged as the dopant 11. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011026176(A) 申请公布日期 2011.02.10
申请号 JP20090175539 申请日期 2009.07.28
申请人 SUMITOMO ELECTRIC IND LTD 发明人 KAWASE TOMOHIRO
分类号 C30B29/40;C30B29/44;H01L21/208 主分类号 C30B29/40
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