摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a groups III-V compound crystal while suppressing polycrystallization. SOLUTION: The method for producing the groups III-V compound crystal includes arranging the raw materials 9 and 10, a sealant 12 and a dopant 11 in a crucible 6, and growing the groups III-V compound crystal by solidifying a melt generated by melting the raw materials 9 and 10. In the arranging process, a compound which includes the elements having a melting point lower than the softening point of the sealant 12 and has a melting point higher than the softening point of the sealant 12 is arranged as the dopant 11. COPYRIGHT: (C)2011,JPO&INPIT
|