| 摘要 |
PROBLEM TO BE SOLVED: To provide a thermionic electricity-generating element having increased electromotive force using a diamond semiconductor. SOLUTION: An emitter electrode 1 uses a p-type diamond semiconductor, and a collector electrode 2 uses an n-type diamond semiconductor. For example, when boron is added to a diamond semiconductor thin film 1b of the emitter electrode 1, an acceptor level is present at approximately 5.1 eV from a conduction band and when nitrogen is added to a diamond semiconductor thin film 2b of the collector electrode 2, a donor level is present at approximately 1.7 eV from the conduction band. A difference in fermi level therefore becomes large to approximately 3.4 eV and the electromotive force can be made large. Thus, the thermionic electricity-generating element is obtained which has the increased electromotive force using the diamond semiconductor. COPYRIGHT: (C)2011,JPO&INPIT |
