发明名称 |
PATTERN FORMATION METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
According to one embodiment, a pattern formation method is disclosed. The method includes forming a plurality of regions on a foundation and the plurality of the regions correspond to different pattern sizes. The method includes separating each of a plurality of block copolymers from another one of the plurality of the block copolymers and segregating the each of the plurality of the block copolymers into a corresponding one of the regions. The method includes performing a phase separation of the each of the block copolymers of each of the regions. The method includes selectively removing a designated phase of each of the phase-separated block copolymers to form a pattern of the each of the block copolymers and the pattern has a different pattern size for the each of the regions.
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申请公布号 |
US2011034029(A1) |
申请公布日期 |
2011.02.10 |
申请号 |
US20100849599 |
申请日期 |
2010.08.03 |
申请人 |
MATSUNAGA KENTARO;OORI TOMOYA;SHIOBARA EISHI;SATO YUKIKO;KAWAMURA YOSHIHISA |
发明人 |
MATSUNAGA KENTARO;OORI TOMOYA;SHIOBARA EISHI;SATO YUKIKO;KAWAMURA YOSHIHISA |
分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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