发明名称 VALUATION METHOD OF DIELECTRIC BREAKDOWN LIFETIME OF GATE INSULATING FILM, VALUATION DEVICE OF DIELECTRIC BREAKDOWN LIFETIME OF GATE INSULATING FILM AND PROGRAM FOR EVALUATING DIELECTRIC BREAKDOWN LIFETIME OF GATE INSULATING FILM
摘要 A valuation method of a dielectric breakdown lifetime of a gate insulating film for evaluating the dielectric breakdown lifetime of the gate insulating film of a MOS type element includes the steps of: deciding a Weibull slope of lifetime distribution until reaching a soft breakdown of the gate insulating film of the MOS type element; deciding a detection condition of the soft breakdown from the decided Weibull slope after the above step; and executing a dielectric breakdown test by using the decided detection condition.
申请公布号 US2011031981(A1) 申请公布日期 2011.02.10
申请号 US20100849096 申请日期 2010.08.03
申请人 SONY CORPORATION 发明人 TSUJIKAWA SHIMPEI
分类号 G01R31/12 主分类号 G01R31/12
代理机构 代理人
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