发明名称 |
READ-ONLY MEMORY AND METHOD OF MANUFACTURE THEREOF |
摘要 |
A mask-defined read-only memory array is formed on a substrate, and includes a first ROM bit and a second ROM bit of opposite polarities. The first ROM bit has a first MOS transistor and a first block layer formed over a first region of the substrate. A second source/drain region of the first MOS transistor and a first diffusion region are formed in a first region of the substrate on opposite sides of the first block layer. The second ROM bit includes a second MOS transistor.
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申请公布号 |
US2011031560(A1) |
申请公布日期 |
2011.02.10 |
申请号 |
US20090536506 |
申请日期 |
2009.08.06 |
申请人 |
HSU CHING-HSIANG;YANG CHING-SUNG;SHEN SHIH-JYE |
发明人 |
HSU CHING-HSIANG;YANG CHING-SUNG;SHEN SHIH-JYE |
分类号 |
H01L27/112;H01L21/336 |
主分类号 |
H01L27/112 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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